Unique spin splitting behaviors in ultrathin InAs layers, which show very different spin splitting characteristics between the InAs monolayer (ML) and submonolayer (SML) have been observed. While distinct spin splitting is observed in an InAs ML, no visible spin splitting is found in a 1/3 ML InAs SML. In addition, the spin relaxation time in the 1/3 ML InAs is found to be much longer than that in the 1 ML sample. These results are in good agreement with the theoretical prediction that the interexcitonic exchange interaction plays a dominant role in energy splitting, while the intraexciton exchange interaction controls the spin relaxation. (c) 2007 American Institute of Physics
We have observed a large spin splitting between "spin" +1 and -1 heavy-hole excitons, having unbalan...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...
By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique...
We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and...
We have studied the exciton spin dynamics in single InAs quantum dots (QDs) with different exciton f...
In a crystal lacking inversion symmetry, in the presence of spin-orbit interaction, the spin degener...
The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs m...
Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 mon...
International audienceWe study the neutral exciton energy spectrum fine structure and its spin depha...
Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the u...
In type II semiconductor heterostructures, one can reduce the electron-hole overlap, without changin...
Spin splitting modulated by uniaxial stress in InAs nanowires This article has been downloaded from ...
Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena....
International audienceMonolayers of transition metal dichalcogenides, namely, molybdenum and tungste...
We have observed a large spin splitting between "spin" +1 and -1 heavy-hole excitons, having unbalan...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...
By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique...
We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and...
We have studied the exciton spin dynamics in single InAs quantum dots (QDs) with different exciton f...
In a crystal lacking inversion symmetry, in the presence of spin-orbit interaction, the spin degener...
The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs m...
Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 mon...
International audienceWe study the neutral exciton energy spectrum fine structure and its spin depha...
Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the u...
In type II semiconductor heterostructures, one can reduce the electron-hole overlap, without changin...
Spin splitting modulated by uniaxial stress in InAs nanowires This article has been downloaded from ...
Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena....
International audienceMonolayers of transition metal dichalcogenides, namely, molybdenum and tungste...
We have observed a large spin splitting between "spin" +1 and -1 heavy-hole excitons, having unbalan...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range fr...