Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron sp...
International audienceWe study, at low temperature and zero magnetic field, the hole-spin dynamics i...
The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs m...
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we fou...
By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique...
Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 mon...
We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and...
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved pho...
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved pho...
We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum ...
Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polari...
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stac...
We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first ex...
The electron-spin dynamics of positively charged excitons in a single InAs quantum dot (QD) were mea...
Photoexcited electron and hole spin relaxation was studied in modulation-doped and undoped InAs/GaAs...
Photoexcited electron and hole spin relaxation has been studied in modulation doped InAs/GaAs self-a...
International audienceWe study, at low temperature and zero magnetic field, the hole-spin dynamics i...
The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs m...
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we fou...
By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique...
Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 mon...
We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and...
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved pho...
We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved pho...
We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum ...
Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polari...
We calculate the spin–orbit induced hole spin relaxation between Zeeman sublevels of vertically stac...
We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first ex...
The electron-spin dynamics of positively charged excitons in a single InAs quantum dot (QD) were mea...
Photoexcited electron and hole spin relaxation was studied in modulation-doped and undoped InAs/GaAs...
Photoexcited electron and hole spin relaxation has been studied in modulation doped InAs/GaAs self-a...
International audienceWe study, at low temperature and zero magnetic field, the hole-spin dynamics i...
The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs m...
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we fou...