Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-resolved PL. The sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of S concentration. By measuring the PL dependence on temperature and by analyzing the PL decay process, we have clarified the localization nature of the sulfur-related exciton emission. Furthermore, the difference of the localization effect in Te- and S-rich ZnSTe is also compared and discussed. © 2005 American Institute of Physics
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superla...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
[[abstract]]This study investigates the temperature-dependent decay dynamics in highly mismatched Zn...
The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. ...
The optical properties of CdSe/ZnSe quantum structures with nominal thickness of the CdSe layer betw...
A systematic study of free and bound exciton emission versus temperature has been performed upon var...
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superla...
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superla...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
[[abstract]]This study investigates the temperature-dependent decay dynamics in highly mismatched Zn...
The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. ...
The optical properties of CdSe/ZnSe quantum structures with nominal thickness of the CdSe layer betw...
A systematic study of free and bound exciton emission versus temperature has been performed upon var...
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superla...
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superla...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...