Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser
- Guo, Y
- Liu, FQ
- Liu, JQ
- Li, CM
- Wang, ZG
- Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
Publication date
January 2005
DOI ISSN
0167-577X Citation count (estimate)
1Abstract
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V/III ratio, growth rates, doping levels and interface control are summarized. Double crystal Xray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (C) 2005 Elsevier B.V. All rights reserved
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