In this paper, the SiC-based clamped-clamped filter was designed and fabricated. The filter was composed of two clamped-clamped beam micromechanical resonators coupled by a spring coupling beam. Structural geometries, including the length and width of the resonator beam and coupling beam, were optimized by simulation for high frequency and high Q, under the material properties of SiC. The vibrating modes for the designed filter structure were analyzed by finite element analysis (FEA) method. For the optimized structure, the geometries of resonator beams and coupling beams, as well as the coupling position, the SiC-based clamped-clamped filter was fabricated by surface micromaching technology
A simple one-step inductively coupled plasma etching technique has been developed for the fabricatio...
[EN] Acoustic properties of an additive-manufactured SiC scaffold with hexagonal symmetry fabricated...
We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus th...
The rapid growth of micromaching technology makes the miniaturized or integrated MEMS resonator or f...
This paper presents the design optimization of the coupling beam of wine glass (WG) mode micromechan...
© The Institution of Engineering and Technology 2016. In this paper, a design of two microelectromec...
In this paper, a design of two microelectromechanical systems based devices is carried out using an ...
Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si subs...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Epitaxial silicon carbide is promising for chemica...
This paper presents the design and a new low-cost process for fabrication of a second-order micromec...
A new mechanical filter structure is presented which comprises two silicon cantilevers mechanically...
To date, there have been interests in designing the Micro-Electro-Mechanical System (MEMS) integrate...
This paper presents a new concept for implementing high-order mechanically-coupled ultra-small bandw...
This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic w...
Abstract—A second-order microelectromechanical systems (MEMS) filter with high selectivity and sharp...
A simple one-step inductively coupled plasma etching technique has been developed for the fabricatio...
[EN] Acoustic properties of an additive-manufactured SiC scaffold with hexagonal symmetry fabricated...
We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus th...
The rapid growth of micromaching technology makes the miniaturized or integrated MEMS resonator or f...
This paper presents the design optimization of the coupling beam of wine glass (WG) mode micromechan...
© The Institution of Engineering and Technology 2016. In this paper, a design of two microelectromec...
In this paper, a design of two microelectromechanical systems based devices is carried out using an ...
Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si subs...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Epitaxial silicon carbide is promising for chemica...
This paper presents the design and a new low-cost process for fabrication of a second-order micromec...
A new mechanical filter structure is presented which comprises two silicon cantilevers mechanically...
To date, there have been interests in designing the Micro-Electro-Mechanical System (MEMS) integrate...
This paper presents a new concept for implementing high-order mechanically-coupled ultra-small bandw...
This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic w...
Abstract—A second-order microelectromechanical systems (MEMS) filter with high selectivity and sharp...
A simple one-step inductively coupled plasma etching technique has been developed for the fabricatio...
[EN] Acoustic properties of an additive-manufactured SiC scaffold with hexagonal symmetry fabricated...
We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus th...