Add to ORKGUndoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects
The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type (...
Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photolumine...
The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studi...
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron life...
In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positr...
Gallium antimonide is an interesting material both from a material and a device point of view. Thedi...
Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defec...
Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident D...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-t...
We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type ...
Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of G...
Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by posi...
Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by...
We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acc...
The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type (...
Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photolumine...
The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studi...
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron life...
In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positr...
Gallium antimonide is an interesting material both from a material and a device point of view. Thedi...
Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defec...
Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident D...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-t...
We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type ...
Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of G...
Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by posi...
Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by...
We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acc...
The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type (...
Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photolumine...
The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studi...