Light extraction of GaN LEDs with 2-D photonic crystal structure
- Liu HW (Liu Hongwei)
- Kan Q (Kan Qiang)
- Wang CX (Wang Chunxia)
- Yu F (Yu Feng)
- Xu XS (Xu Xingsheng)
- Chen HD (Chen Hongda)
- Liu, HW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: liuhongwei@semi.ac.cn
DOIAbstract
Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structure on the top surface of GaN-based light emitting diode (LED). PC patterns are transferred to 460-nm-thick transparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7 degrees, which means that the light extraction efficiency is enhanced outstandingly
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