Nonpolar GaN Mn films have been fabricated by implanting Mn-ion into nonpolar a-plane (MO) GaN films at room temperature. The influence of implantation energy on the Structural, morphological and magnetic characteristics of samples have been investigated by means of stopping and range of ions in matter (SRIM) Simulation software, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). According to the SQUID analysis, obvious room temperature ferromagnetic properties of samples were detected. Moreover, the implantation energy has little impact on the ferromagnetic properties of samples. The XRD and AFM analyses show that the structural and morphological characteristic...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...
The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type ...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...
Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentional...
Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpol...
Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped ...
Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar apla...
The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The fer...
Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentional...
The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOC...
The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOC...
Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabrica...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
Mn ions were implanted into GaN thin films with six doses ranging from 10(14) to 5 x 10(16) cm(-2) a...
Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 32...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...
The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type ...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...
Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentional...
Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpol...
Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped ...
Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar apla...
The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The fer...
Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentional...
The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOC...
The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOC...
Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabrica...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
Mn ions were implanted into GaN thin films with six doses ranging from 10(14) to 5 x 10(16) cm(-2) a...
Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 32...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...
The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type ...
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing ...