X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical propertie...
Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoele...
The SrTiO3(STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs he...
The valence band offset(VBO) of wurtzite indium nitride/strontium titanate(InN/SrTiO3) heterojunctio...
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by ...
The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray...
The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 ...
Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset of the In...
Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitti...
Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase of resea...
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was ch...
The energy band alignment at interfaces of semiconducting oxides is of direct relevance for the elec...
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical propertie...
Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoele...
The SrTiO3(STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 ...
X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs he...
The valence band offset(VBO) of wurtzite indium nitride/strontium titanate(InN/SrTiO3) heterojunctio...
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by ...
The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray...
The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be...
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 ...
Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset of the In...
Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitti...
Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase of resea...
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was ch...
The energy band alignment at interfaces of semiconducting oxides is of direct relevance for the elec...
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical propertie...
Band offsets at ZnO/PbSe heterostructure interfaces are determined by synchrotron radiation photoele...
The SrTiO3(STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic...