Add to ORKGAtomic oxygen is the most hazardous species of molecules present in the Low Earth Orbit causing failure of the material in space. This study was undertaken to examine the differences in the oxidation of silicon by molecular and atomic oxygen. Hypotheses about the effects of reactive atomic oxygen on the oxidation mechanism of silicon and formed oxide microstructure are presented. The oxides created with atomic and molecular oxygen were studied via Rutherford Backscattering (RBS), High-Resolution Transmission Electron Microscopy (HRTEM), Selected Area Electron Diffraction (SAED), Electron-Energy Loss Spectroscopy (EELS), X-ray Photoelectron Scattering (XPS) and Atomic Force Microscopy (AFM).The results obtained in the experiments are discuss...
The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-re...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...
Atomic oxygen is the most hazardous species of molecules present in the Low Earth Orbit causing fail...
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<p style="text-indent: 0.5in; line-height: normal" class="MsoBodyText"><span style="color: black">Sp...
Atomic oxygen is formed in the low Earth orbital environment (LEO) by photo dissociation of diatomic...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
Silicon atoms when cocondensed with molecular oxygen in excess argon at 15K react to form SiO, $O_{3...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
To address the reactions and diffusion of atomic and molecular oxygen in SiO_2, the modification of ...
This paper describes a study concerning the interaction of molecular oxygen (0,) and nitrous oxide (...
The effects of atomic oxygen on boron nitride, silicon nitride, solar cell interconnects used on the...
The oxide on silicon is a major factor in silicon's domination of microelectronics. Yet, there is st...
The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-re...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...
Atomic oxygen is the most hazardous species of molecules present in the Low Earth Orbit causing fail...
<p style="text-indent: 0.5in; line-height: normal" class="MsoBodyText"><span style="color: black">Sp...
<p style="text-indent: 0.5in; line-height: normal" class="MsoBodyText"><span style="color: black">Sp...
Atomic oxygen is formed in the low Earth orbital environment (LEO) by photo dissociation of diatomic...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
Silicon atoms when cocondensed with molecular oxygen in excess argon at 15K react to form SiO, $O_{3...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
Amorphous silicon dioxide and aluminum oxide films are being considered by NASA for application on l...
To address the reactions and diffusion of atomic and molecular oxygen in SiO_2, the modification of ...
This paper describes a study concerning the interaction of molecular oxygen (0,) and nitrous oxide (...
The effects of atomic oxygen on boron nitride, silicon nitride, solar cell interconnects used on the...
The oxide on silicon is a major factor in silicon's domination of microelectronics. Yet, there is st...
The initial oxidation of silicon surfaces with (113) orientation has been investigated using high-re...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...
We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates ...