Plasma DC hollow cathode has been used for film deposition by sputtering with release of neutral atoms from the cathode. The DC Plasma Ar-H2 hollow cathode currently used in the industry has proven to be effective in cleaning surfaces and thin film deposition when compared to argon plasma. When we wish to avoid the effects of ion bombardment on the substrate discharge, it uses the post-discharge region. Were generated by discharge plasma of argon and hydrogen hollow cathode deposition of thin films of titanium on glass substrate. The optical emission spectroscopy was used for the post-discharge diagnosis. The films formed were analyzed by mechanical profilometry technique. It was observed that in the spectrum of the excitation lines of argo...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
Muitas aplicações de plasma exigem que a descarga seja produzida distante da superfície a ser proces...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
O Plasma DC de catodo oco vem sendo utilizado para a deposição de filmes através de sputtering com l...
Many applications require that the plasma discharge is produced apart from the surface to be process...
The technique of surface coating using magnetron sputtering is one of the most widely used in the su...
This work has the object to study the hydrogenated amorphous carbon films a-C:H deposited by paralle...
Filmes finos compósitos de acetileno polimerizado-paládio-carbono foram obtidos pelo processo combin...
Titanium nitride films were grown on glass using the Cathodic Cage Plasma Deposition technique in o...
técnica de revestimento superficial utilizando magnetron sputtering é uma das mais utilizadas pela e...
Filmes finos de TiO2 foram depositados sobre substrato de silício usando descarga em cátodo oco. A p...
The understanding of the plasma based processes which take place during the deposition of thin films...
The aim of this work is diagnostic of plasma chemical deposition thin films based on organometallic ...
Filmes finos orgânicos foram depositados por polimerização a plasma a partir de descargas C2H2, C2H2...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
Muitas aplicações de plasma exigem que a descarga seja produzida distante da superfície a ser proces...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
O Plasma DC de catodo oco vem sendo utilizado para a deposição de filmes através de sputtering com l...
Many applications require that the plasma discharge is produced apart from the surface to be process...
The technique of surface coating using magnetron sputtering is one of the most widely used in the su...
This work has the object to study the hydrogenated amorphous carbon films a-C:H deposited by paralle...
Filmes finos compósitos de acetileno polimerizado-paládio-carbono foram obtidos pelo processo combin...
Titanium nitride films were grown on glass using the Cathodic Cage Plasma Deposition technique in o...
técnica de revestimento superficial utilizando magnetron sputtering é uma das mais utilizadas pela e...
Filmes finos de TiO2 foram depositados sobre substrato de silício usando descarga em cátodo oco. A p...
The understanding of the plasma based processes which take place during the deposition of thin films...
The aim of this work is diagnostic of plasma chemical deposition thin films based on organometallic ...
Filmes finos orgânicos foram depositados por polimerização a plasma a partir de descargas C2H2, C2H2...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...
Muitas aplicações de plasma exigem que a descarga seja produzida distante da superfície a ser proces...
Thin Ti films were grown on silicon (100) wafers by means of a hollow cathode arc evaporation device...