Operating as a SEMATECH resist test center, the Berkeley 0.3-NA EUV microfield exposure tool continues to play a crucial role in the advancement of EUV resists and masks. Here we present recent resist-characterization results from the tool as well as tool-characterization data. In particular we present lithographic-based aberration measurements demonstrating the long-term stability of the tool. We also describe a recent upgrade to the tool which involved redesign of the programmable coherence illuminator to provide improved field uniformity as well as a programmable field size
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure ...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultr...
Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultra...
Synchrotron-based EUV exposure tools continue to play a crucial roll in the development of EUV litho...
With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposu...
Several high-performing resists identified in the past two years have been exposed at the 0.3-numeri...
Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV)...
For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a re...
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamli...
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamli...
Microfield exposure tools (METs) have and continue to play a dominant role in the development of ext...
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure ...
Although tremendous progress has been made in the crucial area of fabrication of extreme ultraviolet...
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure ...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultr...
Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultra...
Synchrotron-based EUV exposure tools continue to play a crucial roll in the development of EUV litho...
With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposu...
Several high-performing resists identified in the past two years have been exposed at the 0.3-numeri...
Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV)...
For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a re...
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamli...
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamli...
Microfield exposure tools (METs) have and continue to play a dominant role in the development of ext...
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure ...
Although tremendous progress has been made in the crucial area of fabrication of extreme ultraviolet...
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure ...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...
Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patter...