Add to ORKGThis paper describes reasons that lifetime measurments may be irreproducible using iodine-in-ethanol (I-E) passivation. Possible factors include the strength of the iodine in ethanol solution, wafer cleaning procedures, influence of wafer container during lifetime measurement, and stability of I-E
We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunctio...
This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basi...
The surface composition of chemically passivated silicon substrates is investigated using XPS and FT...
We report on our observations of light-activated passivation of silicon surfaces by iodine-ethanol s...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Presented at the 3rd World Conference on Photovoltaic Energy Conversion; Osaka, Japan; May 11-18, 20...
We report the surface passivation studies made on p-type single-crystalline silicon wafers using eth...
Lifetime spectroscopy is a valuable tool for the characterization of PV materials. This paper combin...
The main material parameter of silicon is the minority carrier bulk lifetime and influences the effe...
Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true...
Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is cha...
The effective lifetimes of monocrystalline and multicrystalline wafers were measured under dielectri...
For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advanta...
In this article, a study of the effect of different minority carrier lifetime (τ) of wafers on solar...
We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunctio...
This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basi...
The surface composition of chemically passivated silicon substrates is investigated using XPS and FT...
We report on our observations of light-activated passivation of silicon surfaces by iodine-ethanol s...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Presented at the 3rd World Conference on Photovoltaic Energy Conversion; Osaka, Japan; May 11-18, 20...
We report the surface passivation studies made on p-type single-crystalline silicon wafers using eth...
Lifetime spectroscopy is a valuable tool for the characterization of PV materials. This paper combin...
The main material parameter of silicon is the minority carrier bulk lifetime and influences the effe...
Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true...
Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is cha...
The effective lifetimes of monocrystalline and multicrystalline wafers were measured under dielectri...
For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advanta...
In this article, a study of the effect of different minority carrier lifetime (τ) of wafers on solar...
We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunctio...
This paper addresses one source of degradation in OPV devices: the metal/organic interface. The basi...
The surface composition of chemically passivated silicon substrates is investigated using XPS and FT...