Detection of low energy single ion impacts in micron scaletransistors at room temperature

We report the detection of single ion impacts throughmonitoring of changes in the source-drain currents of field effecttransistors (FET) at room temperature. Implant apertures are formed inthe interlayer dielectrics and gate electrodes of planar, micro-scaleFETs by electron beam assisted etching. FET currents increase due to thegeneration of positively charged defects in gate oxides when ions(121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implantdamage is repaired by rapid thermal annealing, enabling iterative cyclesof device doping and electrical characterization for development ofsingle atom devices and studies of dopant fluctuationeffects