In-situ x-ray diffraction was performed while annealing thin-film Au/Cu binary diffusion couples to directly observe diffusion at elevated temperatures. The temperature dependence of the interdiffusion coefficient was determined from isothermal measurements at 700 C, 800 C, and 900 C, where Cu and Au form a disordered continuous face centered cubic solid solution. Large differences in the lattice parameters of Au and Cu allowed the initial diffraction peaks to be easily identified, and later tracked as they merged into one diffraction peak with increased diffusion time. Initial diffusion kinetics were studied by measuring the time required for the Cu to diffuse through the Au thin film of known thickness. The activation energy for interdiff...
Diffusion coefficients and activation energies for diffusion in several successively evaporated two ...
Experiments were performed demonstrating that ion irradiation enhances diffusion-induced grain bound...
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device arc...
Interdiffusion study is conducted in the Au-Cu system, which has complete solid solution in the high...
Grain refinement to the nanocrystalline scale is known to enhance physical properties as strength an...
Au/Cu thin film bimetallic couples containing well defined tilt grain boundaries have been annealed ...
L'interdiffusion dans les films minces bimétalliques de Cu/Sb est étudiée par rétrodiffusion Rutherf...
Experiments were performed to evaluate the effect of 1.5 MeV Kr irradiation on diffusion-induced gra...
It is shown, by using depth profiling with a secondary neutral mass spectrometer and structure inves...
Gold and copper were simultaneously deposited in vacuum by vaporization on a plate of glass, the cop...
The interdiffusion of platimum and gold films, a couple utilized in beam lead microcircuits, has bee...
Thermal diffusion in a multilayer of Au and Cu thin films is studied by means of EXAFS and the short...
Understanding the atomic diffusions at the nanoscale is important for controlling the synthesis and ...
Using Cu/Al diffusion couples initially composed of pure Cu and Al, the reactive diffusion in the bi...
The backscattering technique was used to study the interdiffusion process of Cr and Au films deposit...
Diffusion coefficients and activation energies for diffusion in several successively evaporated two ...
Experiments were performed demonstrating that ion irradiation enhances diffusion-induced grain bound...
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device arc...
Interdiffusion study is conducted in the Au-Cu system, which has complete solid solution in the high...
Grain refinement to the nanocrystalline scale is known to enhance physical properties as strength an...
Au/Cu thin film bimetallic couples containing well defined tilt grain boundaries have been annealed ...
L'interdiffusion dans les films minces bimétalliques de Cu/Sb est étudiée par rétrodiffusion Rutherf...
Experiments were performed to evaluate the effect of 1.5 MeV Kr irradiation on diffusion-induced gra...
It is shown, by using depth profiling with a secondary neutral mass spectrometer and structure inves...
Gold and copper were simultaneously deposited in vacuum by vaporization on a plate of glass, the cop...
The interdiffusion of platimum and gold films, a couple utilized in beam lead microcircuits, has bee...
Thermal diffusion in a multilayer of Au and Cu thin films is studied by means of EXAFS and the short...
Understanding the atomic diffusions at the nanoscale is important for controlling the synthesis and ...
Using Cu/Al diffusion couples initially composed of pure Cu and Al, the reactive diffusion in the bi...
The backscattering technique was used to study the interdiffusion process of Cr and Au films deposit...
Diffusion coefficients and activation energies for diffusion in several successively evaporated two ...
Experiments were performed demonstrating that ion irradiation enhances diffusion-induced grain bound...
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device arc...