A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed
High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hi...
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to ...
The scanning electron microscope (SEM) is a popular instrument used for imaging because of its high ...
Complex problems in materials science require very sensitive, high spatial resolution (< 100 nm) ...
AbstractA charge compensation technique has been developed for secondary ion mass spectrometry and i...
A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Mi...
Abstract An ion electron emission microscope (IEEM) to be installed at the SIRAD heavy ion irradia...
In this work, the phenomena of beam-induced contamination in charged beam microscopes (i.e. the scan...
Journal ArticleMigration of surface ions in lateral fields on insulator surfaces may modify the elec...
The progressive trend to miniaturize samples presents a challenge to materials characterization tech...
The transition to semiconductor design nodes below 100 nm will create high demands on metrology solu...
Both scanning electron microscopes (SEM) and helium ion microscopes (HeIM) are based on the same pri...
The ORIONR PLUS scanning helium ion microscope (HIM) images at sub nanometer resolution. Images of t...
Secondary-ion-mass spectroscopy (SIMS) analysis of insulators using positive primary beams is routin...
We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a de...
High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hi...
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to ...
The scanning electron microscope (SEM) is a popular instrument used for imaging because of its high ...
Complex problems in materials science require very sensitive, high spatial resolution (< 100 nm) ...
AbstractA charge compensation technique has been developed for secondary ion mass spectrometry and i...
A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Mi...
Abstract An ion electron emission microscope (IEEM) to be installed at the SIRAD heavy ion irradia...
In this work, the phenomena of beam-induced contamination in charged beam microscopes (i.e. the scan...
Journal ArticleMigration of surface ions in lateral fields on insulator surfaces may modify the elec...
The progressive trend to miniaturize samples presents a challenge to materials characterization tech...
The transition to semiconductor design nodes below 100 nm will create high demands on metrology solu...
Both scanning electron microscopes (SEM) and helium ion microscopes (HeIM) are based on the same pri...
The ORIONR PLUS scanning helium ion microscope (HIM) images at sub nanometer resolution. Images of t...
Secondary-ion-mass spectroscopy (SIMS) analysis of insulators using positive primary beams is routin...
We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a de...
High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hi...
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to ...
The scanning electron microscope (SEM) is a popular instrument used for imaging because of its high ...
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