The work discussed in this report was supported by a Campus Fellowship LDRD. The report contains three papers that were published by the fellowship recipient and these papers form the bulk of his dissertation. They are reproduced here to satisfy LDRD reporting requirements
Journal ArticleSamplen s of GaxIn1-xP grown by organometallic vapor phase epitaxy on (001) GaAs subs...
Journal ArticleThe effect of the isoelectronic surfactant Bi on surface structure and ordering has b...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Journal ArticleThe effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown...
Journal ArticleRecently, the addition of the isoelectronic surfactant Sb during organometallic vapor...
Contains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force...
Journal ArticleThe use of surfactants to control specific aspects of the vapor-phase epitaxial growt...
Journal ArticleCuPt ordering in GaInP has significant effects on the electrical and optical properti...
During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organomet...
Contains reports on three research projects and a list of publications.3M Company Faculty Developmen...
Cataloged from PDF version of article.Based on the facts that: (a) the transverse acoustic vibration...
Journal ArticleThe first success with the growth of semiconductor materials by vapor phase epitaxy (...
Journal ArticleA surfactant is used to induce an ordered structure in an epitaxial layer. The additi...
Journal ArticleThe use of surfactants during the vapor phase growth of III-V materials to control fu...
Journal ArticleThe incorporation of both dopants and background impurities during the organometallic...
Journal ArticleSamplen s of GaxIn1-xP grown by organometallic vapor phase epitaxy on (001) GaAs subs...
Journal ArticleThe effect of the isoelectronic surfactant Bi on surface structure and ordering has b...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Journal ArticleThe effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown...
Journal ArticleRecently, the addition of the isoelectronic surfactant Sb during organometallic vapor...
Contains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force...
Journal ArticleThe use of surfactants to control specific aspects of the vapor-phase epitaxial growt...
Journal ArticleCuPt ordering in GaInP has significant effects on the electrical and optical properti...
During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organomet...
Contains reports on three research projects and a list of publications.3M Company Faculty Developmen...
Cataloged from PDF version of article.Based on the facts that: (a) the transverse acoustic vibration...
Journal ArticleThe first success with the growth of semiconductor materials by vapor phase epitaxy (...
Journal ArticleA surfactant is used to induce an ordered structure in an epitaxial layer. The additi...
Journal ArticleThe use of surfactants during the vapor phase growth of III-V materials to control fu...
Journal ArticleThe incorporation of both dopants and background impurities during the organometallic...
Journal ArticleSamplen s of GaxIn1-xP grown by organometallic vapor phase epitaxy on (001) GaAs subs...
Journal ArticleThe effect of the isoelectronic surfactant Bi on surface structure and ordering has b...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...