Electrical activation and spin coherence of ultra low doseantimony implants in silicon

We implanted ultra low doses (0.2 to 2 x 10{sup 11} cm{sup -2}) of Sb ions into isotopically enriched {sup 28}Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si{sub 3}N{sub 4} and SiO{sub 2} interfaces limits electrical activation. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant profiles, and the interface quality. A spin decoherence time, T{sub 2}, of 1.5 ms is found for profiles peaking 25 nm below a Si/SiO{sub 2} interface, increasing to 2.1 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins