The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs
The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped ...
various interdiffusion lengths are comprehensively studied as the improved active region for Light-E...
We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emittin...
Abstract: Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally a...
Abstract—A novel gain media based on staggered InGaN quantum wells (QWs) grown by metal–organic chem...
[[abstract]]Staggered quantum well structures are studied to eliminate the influence of polarization...
as improved active region for light-emitting diodes (LEDs) emitting at 500 nm and 540 nm, respective...
Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and...
[[abstract]]Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW a...
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted...
In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized ...
In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized ...
The InGaN-based blue light-emitting diodes (LEDs) with dip-shaped quantum wells (QWs) and convention...
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted...
A correlation between the efficiency droop and the blueshift of the peak wavelength in electrolumine...
The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped ...
various interdiffusion lengths are comprehensively studied as the improved active region for Light-E...
We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emittin...
Abstract: Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally a...
Abstract—A novel gain media based on staggered InGaN quantum wells (QWs) grown by metal–organic chem...
[[abstract]]Staggered quantum well structures are studied to eliminate the influence of polarization...
as improved active region for light-emitting diodes (LEDs) emitting at 500 nm and 540 nm, respective...
Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and...
[[abstract]]Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW a...
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted...
In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized ...
In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized ...
The InGaN-based blue light-emitting diodes (LEDs) with dip-shaped quantum wells (QWs) and convention...
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted...
A correlation between the efficiency droop and the blueshift of the peak wavelength in electrolumine...
The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped ...
various interdiffusion lengths are comprehensively studied as the improved active region for Light-E...
We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emittin...