A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our ...
In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our ...
Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to d...
The process of annealing a SiO2 dielectric layer coated in aluminium, termed the alneal, is known to...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
We present a nano-patterned dielectric coating for crystalline Si solar cells that combines excellen...
We present a nano-patterned dielectric coating for crystalline Si solar cells that combines excellen...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our ...
In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our ...
Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to d...
The process of annealing a SiO2 dielectric layer coated in aluminium, termed the alneal, is known to...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
The n-Pasha n-type silicon solar cell currently achieves an average conversion efficiency of 20.2% u...
We present a nano-patterned dielectric coating for crystalline Si solar cells that combines excellen...
We present a nano-patterned dielectric coating for crystalline Si solar cells that combines excellen...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...
In the recent years, considerable progress has been made in the understanding of the unique silicon ...