We report the first at-wavelength line edge roughness measurements of patterned EUV lithography masks realized using a table-top aerial imaging system based on a table-top {lambda}=13.2 laser
As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requ...
The aerial image characteristics of the modified absorber model with various sidewall angles were qu...
A significant factor in the degradation of nanolithographic image fidelity is optical wavefront aber...
2010 Fall.Includes bibliographic references (pages 111-117).Covers not scanned.Print version deacces...
In the push towards commercialization of extreme-ultraviolet lithography (EUVL), meeting the stringe...
Line-edge roughness (LER) remains the most significant challenge facing the development of extreme u...
This dissertation presents a thorough investigation of how mask roughness induces speckle in the aer...
The work described in this dissertation has improved three essential components of extreme ultraviol...
Aerial image measurement plays a key role in the development of patterned reticles for each generati...
We report the demonstration of a reflection microscope that operates at 13.2-nm wavelength with a sp...
Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies for the 22 nm node and ...
Here we conduct a mask-roughness-induced line-edge-roughness (LER) aberrations sensitivity study bot...
Line-edge roughness (LER) and the related effect of contact size variation remain as significant cha...
orat ng, hia e 25 Extreme ultraviolet (EUV) lithography is expected to be the main candidate in the ...
Extreme ultraviolet lithography (EUVL) is a candidate technology for the microelectronics industry w...
As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requ...
The aerial image characteristics of the modified absorber model with various sidewall angles were qu...
A significant factor in the degradation of nanolithographic image fidelity is optical wavefront aber...
2010 Fall.Includes bibliographic references (pages 111-117).Covers not scanned.Print version deacces...
In the push towards commercialization of extreme-ultraviolet lithography (EUVL), meeting the stringe...
Line-edge roughness (LER) remains the most significant challenge facing the development of extreme u...
This dissertation presents a thorough investigation of how mask roughness induces speckle in the aer...
The work described in this dissertation has improved three essential components of extreme ultraviol...
Aerial image measurement plays a key role in the development of patterned reticles for each generati...
We report the demonstration of a reflection microscope that operates at 13.2-nm wavelength with a sp...
Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies for the 22 nm node and ...
Here we conduct a mask-roughness-induced line-edge-roughness (LER) aberrations sensitivity study bot...
Line-edge roughness (LER) and the related effect of contact size variation remain as significant cha...
orat ng, hia e 25 Extreme ultraviolet (EUV) lithography is expected to be the main candidate in the ...
Extreme ultraviolet lithography (EUVL) is a candidate technology for the microelectronics industry w...
As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requ...
The aerial image characteristics of the modified absorber model with various sidewall angles were qu...
A significant factor in the degradation of nanolithographic image fidelity is optical wavefront aber...