Novel Neo-Pentoxide Precursors for MOCVD Thin Films of TiO(2) and ZrO(2).[1]

Two novel Group IV precursors, titanium (IV) neo-pentoxide, [Ti({mu}-ONep)(ONep){sub 3}]{sub 2} (l), and zirconium (IV) neo-pentoxide, [Zr({mu}-ONep)(ONep){sub 3}]{sub 2} (2), were reported to possess relatively high volatility at low temperatures. These compounds were therefore investigated as MOCVD precursors using a lamp-heated cold-wall CVD reactor and direct sublimation without carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO{sub 2} (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to sublime at 120 C with a deposition rate of {approximately}0.350 {mu}m/min onto a substrate at 330 C forming the anatase phase with < 1% residual C found in the final film. Compound 2 was found to sublime at 160 C and deposited as crystalline material at 300 C with < 1% residual C found in the final film. A comparison to standard alkoxide and {beta}-diketonates is presented where appropriate