Mechanism of electromigration failure in Al thin film interconnects containing Sc

In order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc sere tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM