Compositionally graded single crystalline <100> seed of Ga{sub 1-x}In{sub x}Sb has been grown in a single experiment using a solute diffusion method. The present technique is simple and less time consuming compared to the conventional boot-strapping approach previously used for generating ternary seeds. Starting from an InSb <100> single crystalline seed, a seed of Ga{sub 0.6}In{sub 0.4}Sb has been grown. The effect of temperature gradient on the crystalline quality of seeds grown using this method has been discussed
A procedure to evaluate the growth rate diffusivity from seeded batch runs is reported. The experime...
To achieve a narrow product crystal size distribution is a great challenge and of great practical im...
Gd3Ga5O12 (GGG) polycrystallinc starting material was prepared by solid-state reaction of parent oxi...
Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0....
Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochr...
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances ...
Temperature-gradient zone melting has been utilized to grow a wide range of solid solution compositi...
The ternary alloy, In{sub x}Ga{sub 1-x}Sb, is a compound semiconductor of tunable bandgap in the ran...
652-656InxGa1-xSb (x= 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown f...
GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using s...
A controllable method to supply solute elements into growth solutions was developed by using a sourc...
Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown f...
Crystal seeding is the process of adding homogeneous or heterogeneous crystals to a crystallising so...
A procedure to evaluate the growth rate diffusivity from seeded batch runs is reported. The experime...
To achieve a narrow product crystal size distribution is a great challenge and of great practical im...
Gd3Ga5O12 (GGG) polycrystallinc starting material was prepared by solid-state reaction of parent oxi...
Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0....
Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochr...
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances ...
Temperature-gradient zone melting has been utilized to grow a wide range of solid solution compositi...
The ternary alloy, In{sub x}Ga{sub 1-x}Sb, is a compound semiconductor of tunable bandgap in the ran...
652-656InxGa1-xSb (x= 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown f...
GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using s...
A controllable method to supply solute elements into growth solutions was developed by using a sourc...
Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown f...
Crystal seeding is the process of adding homogeneous or heterogeneous crystals to a crystallising so...
A procedure to evaluate the growth rate diffusivity from seeded batch runs is reported. The experime...
To achieve a narrow product crystal size distribution is a great challenge and of great practical im...
Gd3Ga5O12 (GGG) polycrystallinc starting material was prepared by solid-state reaction of parent oxi...