Intense ion beams (300-keV C{sup +}, O{sup +}, and H{sup +}, 20--30 kA, 50 to 400-ns pulsewidth, up to 0.3-Hz repetition rate) were used to prepare diamond-like carbon (DLC) and boron nitride (BN) films. Deposition rates of up to 25{plus_minus}5 nm/pulse were obtained with instantaneous rates exceeding 1 mm/s. Most films were uniform, light brown, translucent, and nonporous with some micron-size particulates. Raman and parallel electron energy loss spectroscopy indicated the presence of DLC. The films possessed favorable electron field-emission characteristics desirable for cold-cathode displays. Transmission electron microscopy (TEM) and transmission electron diffraction (TED) revealed that the C films contained diamond crystals with 25 to...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Presently the production of thin optical layers is restricted to materials with medium hardness prop...
The origin of low threshold field-emission (threshold field 1.25 V/μm) in nanocrystalline diamond-li...
International audienceThe influence of the incorporation of boron in Diamond-Like Carbon (DLC) films...
Diamond-like carbon (DLC) films have been deposited on dissimilar substrates using three different d...
We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed lase...
Heavily boron-doped nanocrystalline (nc) diamond films were deposited using microwave plasma chemica...
Aim of this laboratory-directed research and development (LDRD) project was to develop diamond and/o...
Amorphous carbon-nitride films were grown on the nitridated diamond substrates by pulsed discharge o...
Diamondlike carbon (DLC) films from a primary ion beam deposition system, were examined using nanoin...
A comparative study of field electron emission properties of different diamond-like carbon films is ...
The effects of additional UV photon irradiation on the formation of cubic boron nitride films obtain...
xv, 182 leaves : ill. ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577P AP 1999 ChanIn this study, w...
Cubic boron nitride (c-BN) film was deposited on Si(100) substrate using the chemical vapor depositi...
Cubic boron nitride (c-BN) is a superhard material with a high potential for applications in differe...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Presently the production of thin optical layers is restricted to materials with medium hardness prop...
The origin of low threshold field-emission (threshold field 1.25 V/μm) in nanocrystalline diamond-li...
International audienceThe influence of the incorporation of boron in Diamond-Like Carbon (DLC) films...
Diamond-like carbon (DLC) films have been deposited on dissimilar substrates using three different d...
We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed lase...
Heavily boron-doped nanocrystalline (nc) diamond films were deposited using microwave plasma chemica...
Aim of this laboratory-directed research and development (LDRD) project was to develop diamond and/o...
Amorphous carbon-nitride films were grown on the nitridated diamond substrates by pulsed discharge o...
Diamondlike carbon (DLC) films from a primary ion beam deposition system, were examined using nanoin...
A comparative study of field electron emission properties of different diamond-like carbon films is ...
The effects of additional UV photon irradiation on the formation of cubic boron nitride films obtain...
xv, 182 leaves : ill. ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577P AP 1999 ChanIn this study, w...
Cubic boron nitride (c-BN) film was deposited on Si(100) substrate using the chemical vapor depositi...
Cubic boron nitride (c-BN) is a superhard material with a high potential for applications in differe...
The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the ...
Presently the production of thin optical layers is restricted to materials with medium hardness prop...
The origin of low threshold field-emission (threshold field 1.25 V/μm) in nanocrystalline diamond-li...