HPVB AND HPVZM SHAPED GROWTH OF CDZNTE, CDSE AND ZNSE CRYSTALS.

High-pressure Bridgman (HPVB) and vertical zone melting (HPVZM) growth processes have been applied for the manufacturing of Cd{sub 1-x}Zn{sub x}Te (x = 0.04-0.2), CdSe and ZnSe crystal tapes with sizes up to 120 x 120 x 12 mm. The influences of the technological parameters describing the growth processes on the crystal quality and some selected material properties are discussed. The dependence of the inclusion (bubbles) content on the deviation from melt stoichiometry is determined. A method for growing plates with low content of inclusions is described. High-resistivity crystal tapes of undoped CdZnTe (10{sup 10} Ohm x cm), CdSe (10{sup 11} Ohm x cm) and ZnSe (>10{sup 11} Ohm x cm) were prepared. The possibility of tape growth on oriented seeds is shown for the example of CdSe. The primary differences between HPVB and HPVZM results are described. The main HPVZM advantage for II-VI compound crystal growth is the possibility of obtaining crystals with more stoichiometric composition or with a controlled deviation from stoichiometry. Hence, HPVZM is preferable for growing high-resistivity II-VI crystals with low inclusion content and possibly with better transport properties. Keywords for this report are: Crystal growth, shaped crystal growth, ZnSe, CdSe, CdZnTe, CZT, HPVB, Bridgman, HPVZM, zone melting, radiation detectors