The phase I program investigated the construction of electronic interconnections through the thickness of a silicon wafer. The novel aspects of the technology are that the length-to-width ratio of the channels is as high as 100:1, so that the minimum amount of real estate is used for contact area. Constructing a large array of these through-wafer interconnections will enable two circuit die to be coupled on opposite sides of a silicon circuit board providing high speed connection between the two
In recent years, through-wafer interconnects have emerged as a critical component required in the fa...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...
The device density of Integrated Circuits (ICs) manufactured by current VLSI technology is reaching ...
Abstract—This paper presents a novel silicon micromachining method, which combines tetra methyl ammo...
3D integration is a key solution to the predicted performance increase of future electronic systems....
Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanica...
3D integration is a rapidly growing topic in the semiconductor industry that encompasses different t...
Technical developments in wafer level packaging of electrical devices are to be in line with the mor...
The mainstream planar technology is marked by physical and technological limitations, which have a s...
3D integration of micro electromechanical systems (MEMS) and integrated circuits (ICs) represents a ...
This thesis presents several low-loss micromachined W-band circuit components suitable for integrati...
Process scaling has resulted in an exponential increase of the number of transistors available to de...
3D integration is a fast growing field that encompasses different types of technologies. The paper a...
Abstract: We present results of the development of high-density 3-D interconnect technology that is ...
This thesis presents a variety of structures for high frequency applications utilizing silicon micro...
In recent years, through-wafer interconnects have emerged as a critical component required in the fa...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...
The device density of Integrated Circuits (ICs) manufactured by current VLSI technology is reaching ...
Abstract—This paper presents a novel silicon micromachining method, which combines tetra methyl ammo...
3D integration is a key solution to the predicted performance increase of future electronic systems....
Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanica...
3D integration is a rapidly growing topic in the semiconductor industry that encompasses different t...
Technical developments in wafer level packaging of electrical devices are to be in line with the mor...
The mainstream planar technology is marked by physical and technological limitations, which have a s...
3D integration of micro electromechanical systems (MEMS) and integrated circuits (ICs) represents a ...
This thesis presents several low-loss micromachined W-band circuit components suitable for integrati...
Process scaling has resulted in an exponential increase of the number of transistors available to de...
3D integration is a fast growing field that encompasses different types of technologies. The paper a...
Abstract: We present results of the development of high-density 3-D interconnect technology that is ...
This thesis presents a variety of structures for high frequency applications utilizing silicon micro...
In recent years, through-wafer interconnects have emerged as a critical component required in the fa...
Abstract-3D integration is a fast growing field that encompasses different types of technologies. Th...
The device density of Integrated Circuits (ICs) manufactured by current VLSI technology is reaching ...