Terahertz (THz) radiation is generated by exciting an un-doped InAs wafer with a femtosecond free-electron laser (FEL) at the Thomas Jefferson National Accelerator Facility. A microwatt level of THz radiation is detected from the unbiased InAs emitter when it is excited with the femtosecond FEL pulses operated at a wavelength of 1.06 {mu}-m and 10 W average power
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
THz pulses with energies up to 100 μJ and corresponding electric fields up to 1 MV/cm were generated...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
The terahertz (THz) region of the electromagnetic spectrum is attracting interest for a broad range ...
The terahertz (THz) wave range, bridging the gap between microwaves and the far infrared, has found ...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
The THz radiation spectrum from InAs in a magnetic field irradiated with femtosecond pulses can be c...
Free-electron lasers are high power radiation sources that utilize a distributed interaction between...
Seeded FEL/IFEL techniques can be used for modulation of a relativistic electron beam longitudinally...
The European XFEL has planned to perform pump-probe experiments by using its x-ray pulses and THz pu...
A comprehensive analysis is presented that describes amplification of a seed THz pulse in a single-p...
Both optical rectification and photoconductive antenna based on femtosecond laser pulses to generate...
The characteristics of terahertz (THz) radiation from the surface of InN excited by the femtosecond ...
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the d...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
THz pulses with energies up to 100 μJ and corresponding electric fields up to 1 MV/cm were generated...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
The terahertz (THz) region of the electromagnetic spectrum is attracting interest for a broad range ...
The terahertz (THz) wave range, bridging the gap between microwaves and the far infrared, has found ...
This paper reports the measurements of the THz emission from InAs films which have been grown by mol...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
The THz radiation spectrum from InAs in a magnetic field irradiated with femtosecond pulses can be c...
Free-electron lasers are high power radiation sources that utilize a distributed interaction between...
Seeded FEL/IFEL techniques can be used for modulation of a relativistic electron beam longitudinally...
The European XFEL has planned to perform pump-probe experiments by using its x-ray pulses and THz pu...
A comprehensive analysis is presented that describes amplification of a seed THz pulse in a single-p...
Both optical rectification and photoconductive antenna based on femtosecond laser pulses to generate...
The characteristics of terahertz (THz) radiation from the surface of InN excited by the femtosecond ...
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the d...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
THz pulses with energies up to 100 μJ and corresponding electric fields up to 1 MV/cm were generated...
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz ...
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