Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

The authors report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multi-stage, type 1, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LED`s produced 2 mW average power at 3.7 {micro}m and 80 K and 0.1 mW at 4.3 {micro}m and 300 K. a multi-stage, 3.8--3.9 {micro}m laser structure operated up to T = 180 K. At 80 K, peak-power > 100 mW/facet and a high slope efficiency (48%) were observed in these gain guided lasers