The steady state and transient thermal behavior of an electromigration test structure was analyzed. The test structure was a Sandia SHIELD (Self-stressing HIgh fregquency rELiability Device) electromigration test device manufactured by an outside vendor. This device has a high frequency oscillator circuit, a buffer circuit to isolate and drive the metal line to the tested (DUT), the DUT to be electromigrated itself, a metal resistance thermometry monitor, and a heater elment to temperature accelerate the electromigration effect
Temperature cycling in power ICs is a reliability hazard, even more so when electromigration is play...
In this paper, the isothermal wafer-level electromigration test method has been used to compare the ...
Electromigration (EM) is one of the major indices to evaluate the reliability performance in IC devi...
An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-lev...
The design of a novel test structure to study the influence of electromigration and thermomigration ...
Microelectronic test structures are used for wide variety of tasks which include equipment character...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
A comprehensive statistical basis is given for the design and conduct of electromigration stress tes...
This work is aimed at proposing a standard procedure for moderately accelerated Electromigration (EM...
International audienceA recently proposed methodology for electromigration (EM) assessment in on-chi...
Further miniaturization of electronic systems is approaching new limits due to the failure mechanism...
To accommodate the increasing input-out (I/O) counts in future integrated circuits, the size of the ...
This paper evaluates different methods to find a solution for heat shields inside integrated power e...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
Electromigration tests have been performed on a number of test structures with different geometries ...
Temperature cycling in power ICs is a reliability hazard, even more so when electromigration is play...
In this paper, the isothermal wafer-level electromigration test method has been used to compare the ...
Electromigration (EM) is one of the major indices to evaluate the reliability performance in IC devi...
An electromigration (EM) test mask was designed to utilize both standard ASTM and Standard Wafer-lev...
The design of a novel test structure to study the influence of electromigration and thermomigration ...
Microelectronic test structures are used for wide variety of tasks which include equipment character...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
A comprehensive statistical basis is given for the design and conduct of electromigration stress tes...
This work is aimed at proposing a standard procedure for moderately accelerated Electromigration (EM...
International audienceA recently proposed methodology for electromigration (EM) assessment in on-chi...
Further miniaturization of electronic systems is approaching new limits due to the failure mechanism...
To accommodate the increasing input-out (I/O) counts in future integrated circuits, the size of the ...
This paper evaluates different methods to find a solution for heat shields inside integrated power e...
As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become...
Electromigration tests have been performed on a number of test structures with different geometries ...
Temperature cycling in power ICs is a reliability hazard, even more so when electromigration is play...
In this paper, the isothermal wafer-level electromigration test method has been used to compare the ...
Electromigration (EM) is one of the major indices to evaluate the reliability performance in IC devi...