The formation of quantum wires has much interest due to their novel electronic properties which may lead to enhanced optoelectronic device performance and greater photovoltaic efficiencies. One method of forming these structures is through spontaneous lateral modulation found during the epitaxial growth of III/V alloys. In this paper, we report and summarize our investigations on the formation of lateral moduation in the MBE grown InAlAs/InP(001) system. This system was grown as a short-period superlattice where n-monolayers of InAs are deposited followed by m-Monolayers of AlAs (with n and m~2) and this sequence is repeated to grown a low strain InAlAs ternary alloy on InP(001) that exhibits lateral modulation. Films were grown under a var...
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown...
Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown...
Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich laye...
The authors have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films ...
The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP ...
The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of...
The microstructure of spontaneous lateral composition modulation along the [110] direction has been ...
The role of the growth mode on lateral composition modulation is studied in short period superlattic...
Improved understanding and control of compositional modulations in epitaxial III-V alloys can result...
We present low temperature photoluminescence data for a series of spontaneous lateral composition mo...
The nature and origin of lateral composition modulations in (AlAs){sub m}(InAs){sub n} SPSs grown by...
The effect of In surface segregation on the microstructure of short period superlattices (SPSs) in t...
The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP subst...
The microstructure of lateral composition in GaAs/InAs and AlAs/InAs short period superlattices was ...
Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure ...
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown...
Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown...
Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich laye...
The authors have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films ...
The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP ...
The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of...
The microstructure of spontaneous lateral composition modulation along the [110] direction has been ...
The role of the growth mode on lateral composition modulation is studied in short period superlattic...
Improved understanding and control of compositional modulations in epitaxial III-V alloys can result...
We present low temperature photoluminescence data for a series of spontaneous lateral composition mo...
The nature and origin of lateral composition modulations in (AlAs){sub m}(InAs){sub n} SPSs grown by...
The effect of In surface segregation on the microstructure of short period superlattices (SPSs) in t...
The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP subst...
The microstructure of lateral composition in GaAs/InAs and AlAs/InAs short period superlattices was ...
Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure ...
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown...
Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown...
Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich laye...