Add to ORKGA physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in BJTs. Simulations show that space charge limited transport is partially responsible for the low-dose-rate enhancement
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
International audienceThe effect of dose on NPN bipolar junction transistors is investigated for irr...
This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradat...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
The performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC`s is lim...
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate ...
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dos...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induc...
The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experi...
A significant reduction in total dose damage is observed when bipolar integrated circuits are irradi...
To optimally design circuits for operation at high intensities of ionizing radiation, and to accurat...
The objective of this work is to develop a model for total dose effects in bipolar junction transist...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
International audienceThe effect of dose on NPN bipolar junction transistors is investigated for irr...
This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradat...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
The performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC`s is lim...
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate ...
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dos...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induc...
The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experi...
A significant reduction in total dose damage is observed when bipolar integrated circuits are irradi...
To optimally design circuits for operation at high intensities of ionizing radiation, and to accurat...
The objective of this work is to develop a model for total dose effects in bipolar junction transist...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
International audienceThe effect of dose on NPN bipolar junction transistors is investigated for irr...
This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradat...