Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} thin films synthesized by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition was used to synthesize epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}{minus}PbTiO{sub 3} films on SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg(DPM){sub 2} as the Mg precursor. Depositing conditions have been identified under which phase-pure perovskite PMN-PT may be grown. In contrast, in lead-poor environments, an additional second phases of a disordered magnesium-niobium oxide has tentatively been identified. X-ray diffraction and selected area electron diffraction indicate a cube-on-cube orientation relationship between film and substrate, with a (001) rocking curve width of 0.1{degree}, and in-plane mosaic of 0.8{degree}. The rms surface roughness of a 200nm thick PMN film on SrTiO{sub 3} was 2 to 3 nm as measured by scanned probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 350 nm thick pure PMN film on SrRuO{sub 3}/SrTiO{sub 3} were 1100 and 2%, respectively. Small-signal permittivity ranged from 900 to 1400 depending on deposition conditions and Ti content; low values for the dielectric loss between 1 and 3% were determined for all specimens. Here the authors report on growth conditions and the initial structural and dielectric characterization of these samples