The speed of automated EBSP orientation gathering has now increased to a point where it is possible to examine large areas of deformed material at a resolution close to the length scale of the dislocation substructures involved (typically < 1 {micro}m for strains of greater than {epsilon} = 1). Investigation of such deformed samples invariably gives rise to diffraction images of low quality and to many double patterns. To assist in a critical selection of the data, it is usual to store a measure of the indexing confidence for each point. Here the authors describe how deformed samples, which provide the appropriate range of pattern qualities, can be used to calibrate acceptance criteria for unsupervised EBSP measurements on deformation micro...
In this paper, we demonstrate that the shift between similar features in two electron backscatter di...
Electron back scatter diffraction (EBSD) has made an impressive impact on the characterization of ma...
We analyse the link between precision of pattern shift measurements and the resolution of the measur...
The diffuseness of electron back scatter patterns (EBSPs) is observed to increase with plastic strai...
The diffuseness of electron back scatter patterns (EBSPs) is observed to increase with plastic strai...
High resolution EBSD directly compares electron backscattering patterns (EBSPs), generated in a scan...
The evolution of the deformed microstructure as a function of imposed plastic strain is of interest ...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly ...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly...
Electron backscatter diffraction (EBSD) is a widely available and relatively easy-to-use scanning-el...
Scanning electron microscopy in combination with digital image correlation (SEM-DIC) is a useful tec...
A set of dynamically simulated electron backscatter patterns (EBSPs) for α-Ti crystals progressively...
In this paper, we demonstrate that the shift between similar features in two electron backscatter di...
The use of Electron Back-Scatter Diffraction (EBSD) as a tool for strain measurement is not a new ap...
In this paper, we demonstrate that the shift between similar features in two electron backscatter di...
Electron back scatter diffraction (EBSD) has made an impressive impact on the characterization of ma...
We analyse the link between precision of pattern shift measurements and the resolution of the measur...
The diffuseness of electron back scatter patterns (EBSPs) is observed to increase with plastic strai...
The diffuseness of electron back scatter patterns (EBSPs) is observed to increase with plastic strai...
High resolution EBSD directly compares electron backscattering patterns (EBSPs), generated in a scan...
The evolution of the deformed microstructure as a function of imposed plastic strain is of interest ...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly ...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly...
The angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly...
Electron backscatter diffraction (EBSD) is a widely available and relatively easy-to-use scanning-el...
Scanning electron microscopy in combination with digital image correlation (SEM-DIC) is a useful tec...
A set of dynamically simulated electron backscatter patterns (EBSPs) for α-Ti crystals progressively...
In this paper, we demonstrate that the shift between similar features in two electron backscatter di...
The use of Electron Back-Scatter Diffraction (EBSD) as a tool for strain measurement is not a new ap...
In this paper, we demonstrate that the shift between similar features in two electron backscatter di...
Electron back scatter diffraction (EBSD) has made an impressive impact on the characterization of ma...
We analyse the link between precision of pattern shift measurements and the resolution of the measur...