Add to ORKGWe report the application of a novel material, InGaAsN, with bandgap energy of 1.05 eV as a junction in an InGaP/GaAs/InGaAsN/Ge 4-junction design. Results of the growth and structural, optical, and electrical properties were demonstrated, showing the promising perspective of this material for ultra high efficiency solar cells. Photovoltaic properties of an as-grown pn diode structure and improvement through post growth annealing were also discussed
Multi-junction solar cells, according to the detailed balance limit, should be able to achieve effic...
Currently, triple junction solar cells realized from III V semiconductor compounds hold the solar en...
We report on the progress made in the development of lattice-matched multijunction solar cells emplo...
Development of next generation high efficiency space monolithic multifunction solar cells will invol...
This report represents the completion of a 6 month Laboratory-Directed Research and Development (LDR...
International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-...
International audienceGaAsPN semiconductors are promising material for the elaboration of high effic...
The main objective of this dissertation's research was to develop single-photon detectors with high ...
International audienceGaAsPN semiconductors are promising material for the development of high-effic...
Abstract: Efficiencies exceeding 40 % have already been achieved with GaAs-based multijunction (MJ) ...
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based ...
Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar ...
Indium gallium nitride (InGaN) alloys, are a promising candidate for high-efficiency solar applicati...
International audienceGaAsPN semiconductors are promising material for the elaboration of high effic...
InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapo...
Multi-junction solar cells, according to the detailed balance limit, should be able to achieve effic...
Currently, triple junction solar cells realized from III V semiconductor compounds hold the solar en...
We report on the progress made in the development of lattice-matched multijunction solar cells emplo...
Development of next generation high efficiency space monolithic multifunction solar cells will invol...
This report represents the completion of a 6 month Laboratory-Directed Research and Development (LDR...
International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-...
International audienceGaAsPN semiconductors are promising material for the elaboration of high effic...
The main objective of this dissertation's research was to develop single-photon detectors with high ...
International audienceGaAsPN semiconductors are promising material for the development of high-effic...
Abstract: Efficiencies exceeding 40 % have already been achieved with GaAs-based multijunction (MJ) ...
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based ...
Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar ...
Indium gallium nitride (InGaN) alloys, are a promising candidate for high-efficiency solar applicati...
International audienceGaAsPN semiconductors are promising material for the elaboration of high effic...
InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapo...
Multi-junction solar cells, according to the detailed balance limit, should be able to achieve effic...
Currently, triple junction solar cells realized from III V semiconductor compounds hold the solar en...
We report on the progress made in the development of lattice-matched multijunction solar cells emplo...