Add to ORKGTrapping of mobile protons is observed in various SOI materials, but only upon irradiating under a positive top Si bias. Thermal detrapping shows that the proton traps are shallow and located near the substrate Si/SiO{sub 2} interface
The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have bee...
Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen con...
We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by en...
In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{...
Liberation of atomic hydrogen is detected upon photon $(h\nu =10\un{eV})$ irradiation of thermally ...
Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device op...
The total dose irradiation effect on the SOI wafer is analyzed at the material level by pseudo-MOSFE...
The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have bee...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
We studied protons attached to bridging O atoms in the vicinity of the Si(100)-SiO2 interface throug...
We report on a measurement of low energy ion irradiation effects on as-grown films of SiO2 on a Si s...
Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models....
A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were st...
We investigated the effect of irradiation on molybdenum disulfide (MoS<sub>2</sub>) field effect tra...
Electron trapping near the Si/SiO{sub 2} interface plays a crucial role in mitigating the response o...
The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have bee...
Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen con...
We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by en...
In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{...
Liberation of atomic hydrogen is detected upon photon $(h\nu =10\un{eV})$ irradiation of thermally ...
Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device op...
The total dose irradiation effect on the SOI wafer is analyzed at the material level by pseudo-MOSFE...
The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have bee...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
We studied protons attached to bridging O atoms in the vicinity of the Si(100)-SiO2 interface throug...
We report on a measurement of low energy ion irradiation effects on as-grown films of SiO2 on a Si s...
Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models....
A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were st...
We investigated the effect of irradiation on molybdenum disulfide (MoS<sub>2</sub>) field effect tra...
Electron trapping near the Si/SiO{sub 2} interface plays a crucial role in mitigating the response o...
The kinetics of trapping and detrapping of protons at surface sites on thermally grown SiO2 have bee...
Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen con...
We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by en...