The development of potassium tantalate niobate thin films for satellite-based pyroelectric detectors

Potassium tantalate niobate (KTN) pyroelectric detectors are expected to provide detectivities, of 3.7 x 10{sup 11} cmHz {sup {1/2}}W{sup {minus}1} for satellite-based infrared detection at 90 K. The background limited detectivity for a room-temperature thermal detector is 1.8 x 10{sup 10} cmHz{sup {1/2}}W{sup {minus}1}. KTN is a unique ferroelectric for this application because of the ability to tailor the temperature of its pyroelectric response by adjusting its ratio of tantalum to niobium. The ability to fabricate high quality KTN thin films on Si-based substrates is crucial to the development of KTN pyroelectric detectors. Si{sub x}N{sub y} membranes created on the Si substrate will provide the weak thermal link necessary to reach background limited detectivities. The device dimensions obtainable by thin film processing are expected to increase the ferroelectric response by 20 times over bulk fabricated KTN detectors. In addition, microfabrication techniques allow for easier array development. This is the first reported attempt at growth of KTN films on Si-based substrates. Pure phase perovskite films were grown by pulsed laser deposition on SrRuO{sub 3}/Pt/Ti/Si{sub x}N{sub y}/Si and SrRuO{sub 3}/Si{sub x}N{sub y}/Si structures; room temperature dielectric permittivities for the KTN films were 290 and 2.5, respectively. The dielectric permittivity for bulk grown, single crystal KTN is {approximately}380. In addition to depressed dielectric permittivities, no ferroelectric hysteresis was found between 80 and 300 K for either structure. RBS, AES, TEM and multi-frequency dielectric measurements were used to investigate the origin of this apparent lack of ferroelectricity. Other issues addressed by this dissertation include: the role of oxygen and target density during pulsed laser deposition of KTN thin films; the use of YBCO, LSC and Pt as direct contact bottom electrodes to the KTN films, and the adhesion of the bottom electrode layers to Si{sub x}N{sub y}/Si