The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has...
Within the scope of this thesis, a test stand Photo-CATCH for research on semiconductor photocathode...
[[abstract]]In accordance with the invention, a contaminated III-V semiconductor surface is cleaned ...
We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and const...
Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of p...
Atomic hydrogen cleaning followed by heat cleaning at 450◦C was used to prepare negative-electron-af...
Before a GaAs photocathode can be activated to achieve a negative electron affinity condition, the G...
Reflection high-energy electron diffraction and scanning tunnelling microscopy have been used to stu...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
The effects of atomic hydrogen (AH) exposure on epi-ready, low-index surface orientations of GaAs at...
Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is im...
Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is im...
Within the scope of this thesis, a test stand Photo-CATCH for research on semiconductor photocathode...
[[abstract]]In accordance with the invention, a contaminated III-V semiconductor surface is cleaned ...
We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and const...
Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of p...
Atomic hydrogen cleaning followed by heat cleaning at 450◦C was used to prepare negative-electron-af...
Before a GaAs photocathode can be activated to achieve a negative electron affinity condition, the G...
Reflection high-energy electron diffraction and scanning tunnelling microscopy have been used to stu...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
Gallium Arsenide has been in use as photocathode material for many years, exclusively providing phot...
The effects of atomic hydrogen (AH) exposure on epi-ready, low-index surface orientations of GaAs at...
Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is im...
Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is im...
Within the scope of this thesis, a test stand Photo-CATCH for research on semiconductor photocathode...
[[abstract]]In accordance with the invention, a contaminated III-V semiconductor surface is cleaned ...
We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and const...