Add to ORKGThe performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC`s is limited by changes in surface recombination velocity and surface potential due to oxide-trap charge in the base oxide and near-midgap interface traps at the emitter- base/oxide interface. This report discusses how this charge trapping is enhanced by low-rate radiation as with implantation and annealing
The effect of ionising radiation on the BiCMOS switching response has been studied. The radiation-in...
To optimally design circuits for operation at high intensities of ionizing radiation, and to accurat...
The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studi...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induc...
A significant reduction in total dose damage is observed when bipolar integrated circuits are irradi...
Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide...
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate ...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-d...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
The effect of ionising radiation on the BiCMOS switching response has been studied. The radiation-in...
To optimally design circuits for operation at high intensities of ionizing radiation, and to accurat...
The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studi...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-...
Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induc...
A significant reduction in total dose damage is observed when bipolar integrated circuits are irradi...
Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide...
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate ...
The roles of net positive oxide trapped charge and surface recombination velocity in producing exces...
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-d...
The current gain of bipolar junction transistors is reduced due to ionizing radiation exposure or ho...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated ir...
The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
The effect of ionising radiation on the BiCMOS switching response has been studied. The radiation-in...
To optimally design circuits for operation at high intensities of ionizing radiation, and to accurat...
The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studi...