Add to ORKGThe nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions
In the research of semiconducting materials, the ion beam induced charge collection (IBIC) technique...
The ion beam induced charge (IBIC) microscopy is a valuable tool for the analysis of the electronic ...
To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accu...
As feature sizes of Integrated Circuits (ICs) continue to shrinlL the sensitivity of these devices, ...
As future sizes of Integrated Circuits (ICs) continue to shrink the sensitivity of these devices, pa...
Optically targeted, ion microbeams provide a useful means of exposing individual structures within a...
An imaging technique is described which produces micron-resolution maps of the single-event upset se...
A new form of microscopy has been developed which produces micron-resolution maps of where single ev...
High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The mechanisms responsible for single event upsets can be studied more realistically in transistors ...
Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the pres...
Ion Beam Induced Charge (IBIC) microscopy performed using highly tuned microbeams of accelerated ion...
The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of im...
Abstract Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has ...
In the research of semiconducting materials, the ion beam induced charge collection (IBIC) technique...
The ion beam induced charge (IBIC) microscopy is a valuable tool for the analysis of the electronic ...
To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accu...
As feature sizes of Integrated Circuits (ICs) continue to shrinlL the sensitivity of these devices, ...
As future sizes of Integrated Circuits (ICs) continue to shrink the sensitivity of these devices, pa...
Optically targeted, ion microbeams provide a useful means of exposing individual structures within a...
An imaging technique is described which produces micron-resolution maps of the single-event upset se...
A new form of microscopy has been developed which produces micron-resolution maps of where single ev...
High resolution, calibrated ion beam induced charge (IBIC) measurements from integrated circuit test...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The mechanisms responsible for single event upsets can be studied more realistically in transistors ...
Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the pres...
Ion Beam Induced Charge (IBIC) microscopy performed using highly tuned microbeams of accelerated ion...
The ion beam induced charge (IBIC) microscopy technique has recently been developed as a means of im...
Abstract Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has ...
In the research of semiconducting materials, the ion beam induced charge collection (IBIC) technique...
The ion beam induced charge (IBIC) microscopy is a valuable tool for the analysis of the electronic ...
To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accu...