Add to ORKGSingle-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data that extend up to 150 MeV, for incident protons and neutrons. Calculated SEU cross sections are compared with measured data
International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for t...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
The characteristics of the energy deposition of the secondary particles from the proton and neutron ...
Until recently, the effects of radiation environment on on-board electronics on launchers and aircra...
In Universe, there are innumeral activities that keep on happening and a lot of effects that are pro...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
International audienceDesigning integrated circuits in radiation environments such as the High Lumin...
Single Event Upset (SEU) measurements were performed on the ESA SEU Monitor using mono-energetic GeV...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and t...
INTERNATIONAL STANDARD SERIAL NUMBERS (Translation and Original): 0018-9499International audienceAn ...
The aim of this work is to provide a method to calculate single event upset (SEU) cross sections by ...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
Separate evaluations have been done for the three stable isotopes of silicon for ENDF/B-VI. The eval...
International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for t...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
The characteristics of the energy deposition of the secondary particles from the proton and neutron ...
Until recently, the effects of radiation environment on on-board electronics on launchers and aircra...
In Universe, there are innumeral activities that keep on happening and a lot of effects that are pro...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
International audienceDesigning integrated circuits in radiation environments such as the High Lumin...
Single Event Upset (SEU) measurements were performed on the ESA SEU Monitor using mono-energetic GeV...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and t...
INTERNATIONAL STANDARD SERIAL NUMBERS (Translation and Original): 0018-9499International audienceAn ...
The aim of this work is to provide a method to calculate single event upset (SEU) cross sections by ...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
Separate evaluations have been done for the three stable isotopes of silicon for ENDF/B-VI. The eval...
International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for t...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
The characteristics of the energy deposition of the secondary particles from the proton and neutron ...