Add to ORKGA classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Onl...
We report on local vibrational modes (LVMs) in highly Mg-doped GaN grown by molecular beam epitaxy. ...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
Abstract. In wide bandgap GaN a large number of interesting and important scientific questions remai...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostati...
Wide bandgap GaN very often shows a high electron concentration. Although several impurities such as...
We investigated free carriers related opticał absorption in GaN in hydrostatic pressures up to 30 GP...
In the first part of this work, the author describes studies of donors in AlSb and in GaAs at large ...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Onl...
We report on local vibrational modes (LVMs) in highly Mg-doped GaN grown by molecular beam epitaxy. ...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
Abstract. In wide bandgap GaN a large number of interesting and important scientific questions remai...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydro...
A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostati...
Wide bandgap GaN very often shows a high electron concentration. Although several impurities such as...
We investigated free carriers related opticał absorption in GaN in hydrostatic pressures up to 30 GP...
In the first part of this work, the author describes studies of donors in AlSb and in GaAs at large ...
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, gr...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Onl...
We report on local vibrational modes (LVMs) in highly Mg-doped GaN grown by molecular beam epitaxy. ...