The stress relaxation behavior of SN88, SN253, and NCX-5102 silicon nitride materials were experimentally determined in tension at 1300{degrees}C using buttonhead specimens. Specimens were held at constant strain after being loaded at 10 MPa/s to an initial stress of 276 MPa (40 ksi) or 414 MPa (60 ksi). The subsequent decay in tensile stress was measured as a function of time. A non-negative least squares algorithm used in conjunction with a generalized Maxwell model proved to be an efficient means to define characteristic relaxation modulus spectra and stress relaxation behavior. In the last part of this study, the utility of using short-term stress relaxation testing to predict long-term creep performance was examined
A new impulse excitation technique (IET) device was used to investigate the elastic and anelastic pr...
Tensile creep studies were carried out to evaluate the creep performance of AS800 silicon nitride sa...
Dynamic thermal stresses and cyclic crack growth behavior produced by a single and repeated thermal ...
Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air usi...
The evaluation was done between 1300 and 1425 C in ambient air. Minimum creep rate was evaluated vs ...
Tension-tension cyclic fatigue tests (triangular waveform, {sigma}{sub max} = 100 MPa, R = 0.1) were...
International audienceSilicon nitride processed by gas pressure sintering contains a very small amou...
Abstract: The creep properties derived from stress relaxation tests are compared to those from creep...
International audienceThe tensile behaviour of a silicon nitride ceramic has been studied between 16...
International audienceThe temperature dependences of Young's modulus (E) and fracture toughness (K-1...
The creep and stress relaxation behavior of a Fe-17Mn-5Si-10Cr-4Ni-1(V,C) (wt%) shape memory alloy a...
High temperature tensile creep studies of a commercially available hot isostatically pressed (HIPed)...
The creep behaviour of silicon nitride with three different sintering aids has been studied. In addi...
Viscous energy dissipation in a liquid phase sintered silicon nitride, and the resulting internal fr...
To investigate the link between internal friction and fatigue resistance of sintered silicon nitride...
A new impulse excitation technique (IET) device was used to investigate the elastic and anelastic pr...
Tensile creep studies were carried out to evaluate the creep performance of AS800 silicon nitride sa...
Dynamic thermal stresses and cyclic crack growth behavior produced by a single and repeated thermal ...
Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air usi...
The evaluation was done between 1300 and 1425 C in ambient air. Minimum creep rate was evaluated vs ...
Tension-tension cyclic fatigue tests (triangular waveform, {sigma}{sub max} = 100 MPa, R = 0.1) were...
International audienceSilicon nitride processed by gas pressure sintering contains a very small amou...
Abstract: The creep properties derived from stress relaxation tests are compared to those from creep...
International audienceThe tensile behaviour of a silicon nitride ceramic has been studied between 16...
International audienceThe temperature dependences of Young's modulus (E) and fracture toughness (K-1...
The creep and stress relaxation behavior of a Fe-17Mn-5Si-10Cr-4Ni-1(V,C) (wt%) shape memory alloy a...
High temperature tensile creep studies of a commercially available hot isostatically pressed (HIPed)...
The creep behaviour of silicon nitride with three different sintering aids has been studied. In addi...
Viscous energy dissipation in a liquid phase sintered silicon nitride, and the resulting internal fr...
To investigate the link between internal friction and fatigue resistance of sintered silicon nitride...
A new impulse excitation technique (IET) device was used to investigate the elastic and anelastic pr...
Tensile creep studies were carried out to evaluate the creep performance of AS800 silicon nitride sa...
Dynamic thermal stresses and cyclic crack growth behavior produced by a single and repeated thermal ...