Composite fermions in 2 {times} 10{sup 6} cm{sup 2}/Vs mobility AlGaAs/GaAs heterostructures grown by MOCVD
- Simmons, J.A.
- Chui, H.C.
- Harff, N.E.
- Hammons, B.E.
- Du, R.R.
- Zudov, M.A.
DOIAbstract
The authors report on the recent growth by MOCVD of 2.0 {times} 106 cm2/Vs mobility heterostructures. These mobilities, the highest reported to date, are attributed to the use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect (FQHE) states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. The extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples
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