It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light changes much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This c...
In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Int...
International audienceTo take into account the presence of multiple light-induced defect states in h...
In studying photovoltaic devices made with silicon thin films and considering them according to thei...
The electric field E within the i-layer of hydrogenated amorphous silicon (a-Si:H) solar cells stron...
We present results of computer simulations of the light induced degradation of amorphous silicon sol...
We present a combination of experimental and computer modelling studies of the light induced degrada...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
Steady-state photoconductivity measurements have been carried out on thin-film silicon pin structure...
To investigate the limiting role of electronic defects in the absorber layer of amorphous and microc...
M.Sc. (Physics)Amorphous silicon is one of the most promising materials for large area solar cells f...
We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar c...
Using the improved expression of the defect pool model proposed by Powell and Deane we match the exp...
The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spe...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Int...
International audienceTo take into account the presence of multiple light-induced defect states in h...
In studying photovoltaic devices made with silicon thin films and considering them according to thei...
The electric field E within the i-layer of hydrogenated amorphous silicon (a-Si:H) solar cells stron...
We present results of computer simulations of the light induced degradation of amorphous silicon sol...
We present a combination of experimental and computer modelling studies of the light induced degrada...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
We summarize an extensive study on the impact of absorber layer defect density on the performance of...
Steady-state photoconductivity measurements have been carried out on thin-film silicon pin structure...
To investigate the limiting role of electronic defects in the absorber layer of amorphous and microc...
M.Sc. (Physics)Amorphous silicon is one of the most promising materials for large area solar cells f...
We report on the formation of large voids in hydrogenated polymorphous silicon (pm-Si:H) PIN solar c...
Using the improved expression of the defect pool model proposed by Powell and Deane we match the exp...
The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spe...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
In this article, two factors that limit the performance of HIT solar cells (Heterojunction with Int...
International audienceTo take into account the presence of multiple light-induced defect states in h...
In studying photovoltaic devices made with silicon thin films and considering them according to thei...