Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition
Les conditions expérimentales optimales de dépôt CVD de TaSi2 et WSi2 ont été définies à l'aide de c...
International audienceIn this work, we present elaboration of Ta-based thin films by ALD from a nove...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...
A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the gr...
A low temperature plasma-promoted chemical vapor deposition (PPCVD) process has been developed for t...
A low temperature inorganic plasma-enhanced chemical vapor deposition (PECVD) process has been devel...
Tantalum coatings are elaborated on titanium substrates through Low Pressure Chemical Vapor Depositi...
A versatile chemical vapor deposition (CVD) technique is proposed wh ich has two noteworthy technic...
Failure of current standard pipeline materials in chloride processing environments has a high enviro...
A review is presented of early and recent advances in the metal-organic chemical vapor deposition (M...
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in whic...
The tantalum oxide thin films are promising materials for various applications: as coatings in optic...
Tantalum phosphide coatings were prepared by chemical vapour deposition reaction of TaCl5 and PH2Cy ...
This thesis investigates the formation of thin films of early transition metal sulfides via a range ...
[[abstract]]Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organi...
Les conditions expérimentales optimales de dépôt CVD de TaSi2 et WSi2 ont été définies à l'aide de c...
International audienceIn this work, we present elaboration of Ta-based thin films by ALD from a nove...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...
A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the gr...
A low temperature plasma-promoted chemical vapor deposition (PPCVD) process has been developed for t...
A low temperature inorganic plasma-enhanced chemical vapor deposition (PECVD) process has been devel...
Tantalum coatings are elaborated on titanium substrates through Low Pressure Chemical Vapor Depositi...
A versatile chemical vapor deposition (CVD) technique is proposed wh ich has two noteworthy technic...
Failure of current standard pipeline materials in chloride processing environments has a high enviro...
A review is presented of early and recent advances in the metal-organic chemical vapor deposition (M...
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in whic...
The tantalum oxide thin films are promising materials for various applications: as coatings in optic...
Tantalum phosphide coatings were prepared by chemical vapour deposition reaction of TaCl5 and PH2Cy ...
This thesis investigates the formation of thin films of early transition metal sulfides via a range ...
[[abstract]]Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organi...
Les conditions expérimentales optimales de dépôt CVD de TaSi2 et WSi2 ont été définies à l'aide de c...
International audienceIn this work, we present elaboration of Ta-based thin films by ALD from a nove...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...