Effects of solution precursor nature on sol-gel derived PZT thin film crystallization behavior and properties

In fabricating lead zirconate titanate (PZT) films for nonvolatile memories and decoupling capacitors, various deposition methods have been investigated. Each can produce films with acceptable dielectric and ferroelectric properties, but sol-gel methods offer excellent control of film stoichiometry and coating uniformity. The sol-gel approaches for PZT film fabrication fall into two categories: processes that use 2-methoxyethanol as a solvent, and processes that use chelating agents, such as acetic acid, for reducing the hydrolysis sensitivity of the alkoxide compounds. Due to concerns about the toxicity of 2-methoxyethanol, we have concentrated on the second category. It was found that, in addition to reducing the hydrolysis sensitivity, the chelating agents serves to define the processing behavior of the films: film consolidation after deposition and densification and crystallization during heat treatment. This paper discusses the relations between precursor structure (reactions between chelating agents and the metal alkoxide starting reagents) and film consolidation, densification, and crystallization