Add to ORKGSilicon implanted thermal SiO{sub 2} layers were studied using depth-resolved positron annihilation spectroscopy (PAS) and transmission electron microscopy (TEM). TEM observations show the presence of silicon nanocrystals (Si{sub nc}) in the region between 200 nm and 200 nm. The defect annealing behavior is studied by means of PAS. For 1000{degrees}C annealed samples at a depth for which Si{sub nc} are observed, a distinctive PAS signal is detected and ascribed to the Si{sub nc}/SiO{sub 2} interface
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by u...
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...
Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminesc...
Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminesc...
PAS is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in ...
PAS is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in ...
Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and ...
Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and ...
Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a d...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Thin SiO 2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and h...
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by u...
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...
Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminesc...
Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminesc...
PAS is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in ...
PAS is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in ...
Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and ...
Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and ...
Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a d...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Thin SiO 2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and h...
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by u...
The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a c...