High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry
- Datar, Sameer A.
- Wu, Liying
- Guo, Baonian N.
- Nigam, Mohit
- Necsoiu, Daniela
- Zhai, Y. J.
- Smith, D. E.
- Bouanani, Mohamed El
- Yang, C.
- Lee, J. J.
- McDaniel, Floyd Del. (Floyd Delbert), 1942-
Publication date
December 2000
DOI Publisher
American Institute of Physics ISSN
0003-6951 Citation count (estimate)
6Abstract
This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry
Add to ORKG