The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current-time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS mea...
Ru has been considered as a next generation barrier material in Cu metallization for ultra-large sca...
Ru attracted considerable attention as a candidate to replace TaN as a diffusion barrier layer for C...
This study introduces the direct electrodeposition of Cu on Ru-Al2O3 layers, which is a promising ma...
Superfilling of submicrometer trenches by direct copper electrodeposition onto physical vapor deposi...
For decades, Ta/TaN has been the industry standard for a diffusion barrier against Cu in interconnec...
International audienceBy comparing the growth of Cu thin films on bare and graphene-covered Ru(0 0 0...
Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study as ...
Understanding the mechanism of metal electrodeposition on graphene as the simplest building block of...
In this work, the possibility of Cu electrodeposition on Ru-Ta alloy thin films is explored. Ru and...
Graphene grown by CVD on Cu foils has generated interest due to low cost and the prospect of large-a...
The properties of heteroepitaxial thin films are very much dependent on the method used for their de...
Nowadays, many different methods are used to produce graphene. Electrochemical techniques represent ...
The growth of two dimensional materials such as graphene and hexagonal boron nitride (h-BN) have bee...
Ru quasi-single-crystal electrodes, prepared by resistive heating of Ru deposited on Pt single-cryst...
DoctorGraphene is a two-dimensional carbon allotrope exhibiting high charge-carrier mobility, therma...
Ru has been considered as a next generation barrier material in Cu metallization for ultra-large sca...
Ru attracted considerable attention as a candidate to replace TaN as a diffusion barrier layer for C...
This study introduces the direct electrodeposition of Cu on Ru-Al2O3 layers, which is a promising ma...
Superfilling of submicrometer trenches by direct copper electrodeposition onto physical vapor deposi...
For decades, Ta/TaN has been the industry standard for a diffusion barrier against Cu in interconnec...
International audienceBy comparing the growth of Cu thin films on bare and graphene-covered Ru(0 0 0...
Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study as ...
Understanding the mechanism of metal electrodeposition on graphene as the simplest building block of...
In this work, the possibility of Cu electrodeposition on Ru-Ta alloy thin films is explored. Ru and...
Graphene grown by CVD on Cu foils has generated interest due to low cost and the prospect of large-a...
The properties of heteroepitaxial thin films are very much dependent on the method used for their de...
Nowadays, many different methods are used to produce graphene. Electrochemical techniques represent ...
The growth of two dimensional materials such as graphene and hexagonal boron nitride (h-BN) have bee...
Ru quasi-single-crystal electrodes, prepared by resistive heating of Ru deposited on Pt single-cryst...
DoctorGraphene is a two-dimensional carbon allotrope exhibiting high charge-carrier mobility, therma...
Ru has been considered as a next generation barrier material in Cu metallization for ultra-large sca...
Ru attracted considerable attention as a candidate to replace TaN as a diffusion barrier layer for C...
This study introduces the direct electrodeposition of Cu on Ru-Al2O3 layers, which is a promising ma...